II-VI is accelerating investments in the fabrication of 6- and 8-inch silicon carbide (SiC) substrates and epitaxial wafers in the United States and Sweden. The company previously announced that it would invest $1 billion over the next decade in large-scale plant expansions in Easton, Pennsylvania, and Kista, Sweden, in a bid to become one of the world's largest suppliers.

According to eeNews, II-VI will massively build a nearly 300,000-square-foot facility in Easton, U.S., to expand production of its state-of-the-art 6- and 8-inch SiC substrates and epitaxial wafers. By 2027, Easton's production of 6- and 8-inch SiC substrates is expected to reach the equivalent of 1 million 6-inch substrates per year, with the proportion of 8-inch substrates expected to grow over time.

In addition, the expansion of epitaxial wafer capacity in Kista, Sweden, is aimed at serving the European market. The technology was acquired from Ascatron for II-VI, except that it enables thick layer structures in single or multiple regeneration steps. capability, making the product suitable for power equipment for applications above 1 kV.

"Our customers are accelerating their plans to meet the expected wave of demand for SiC power devices in electric vehicles, which we expect will closely follow current adoption cycles in industrial, renewable energy, data centers, and more." New Ventures & wide "The Easton fab will increase II-VI's SiC substrate production by a factor of at least six over the next five years, and it will also be II-VI's flagship 8-inch SiC epitaxial wafer," said Sohail Khan, executive vice president of electronic technology at bandgap. Manufacturing center, which is one of the largest in the world."