This new platform has a 40V DMOS breakdown voltage of up to 52V, and on-resistance as low as 20 mOhm.mm2, reaching leading process levels of the node which can improve the drive capability of products, reduce the size of chips, expand the safe-operation-area (SOA) of high-voltage tubes and ensure the high reliability of products.

The platform has a minimum of 18 mask layers, and offers a wide range of optional components including high-ohmic resistors, capacitors, Zener diodes, Schottky diodes, etc.