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600V GaN fets have built-in drivers for easy use from 100W to 10kW

Feb 02 74
TI-LMG3411R070

The 50 and 70mΩ devices are intended for applications from 100W up to 10kW.

While GaN transistor have the potential to increase the efficiency and shrink the size of power supplies, their high speed and somewhat fussy characterisitcs mean that they need careful driving if clean operation is to be obtained.