Samsung announced that it has developed the first 10nm third-generation ultra-high performance and high-efficiency DRAM

  According to Samsung Electronics' official website, as the global leader in advanced memory technology, Samsung Electronics announced the third generation of 1z-nm 8GB ultra-high performance and high-efficiency DRAM on March 21. Just 16 months since the start of mass production of the second-generation 1y-nm 8Gb DDR4, Samsung no longer uses EUV processing to develop 1z-nm 8Gb DDR4, indicating that Samsung has broken the DRAM expansion limit.