Accelerate the development and launch of advanced power gallium nitride solutions; make full use of ST's automotive market expertise and TSMC's world-leading manufacturing technology; improve the energy efficiency of wide bandgap products, and make power conversion applications more energy efficient

On February 24, STMicroelectronics and TSMC worked together to accelerate the development of gallium nitride (GaN) process technology and the supply of GaN discrete and integrated devices. Through this collaboration, ST's innovative strategic gallium nitride products will use TSMC's industry-leading GaN manufacturing process.

镓 Gallium nitride (GaN) is a wide bandgap semiconductor material. Compared with traditional silicon power semiconductors, it has obvious advantages. For example, it has higher energy efficiency when working at high power, which significantly reduces parasitic power loss. GaN technology can also design more compact devices, giving the target application a better form factor. In addition, the switching speed of gallium nitride devices is 10 times that of silicon devices, and at the same time, the peak operating temperature is higher. These robust and strong material characteristics make gallium nitride very suitable for the growing 100V and 650V automotive, industrial, telecommunications and specific Consumer and other applications.

Specifically, compared to silicon technology based on the same topology, power gallium nitride and gallium nitride IC technology will enable STMicroelectronics to provide customers with better energy-efficient solutions for mid- to high-power applications, including hybrid and electric vehicles. Power converter and charger. Power gallium nitride and gallium nitride IC technology will help promote the rapid development of the electrification of passenger cars and commercial vehicles.

Marco Monti, President of Automotive and Discrete Devices, STMicroelectronics, said, "As a leader in the demanding automotive and industrial wide bandgap semiconductor technology and power semiconductor industry, STMicroelectronics is optimistic about accelerating the development and delivery of gallium nitride process technology, The huge opportunity brought by the launch of gallium nitride and gallium nitride IC products to the market. TSMC is a trusted foundry partner, and only they can meet the unique reliability and development planning requirements of ST's target customers. "This collaborative project complements our production capacity for the production of power gallium nitride in cooperation with CEA-Leti at the plant in Tours, France. GaN is the next major innovation in power and smart power electronics and process technology."

"We look forward to working with STMicroelectronics to bring gallium nitride power electronics technology to industrial and automotive power conversion system applications. TSMC's industry-leading gallium nitride manufacturing expertise, combined with ST ’s product design and automotive-grade certification will significantly improve the energy efficiency of industrial and automotive power conversion, make it more energy-efficient and environmentally friendly, and help accelerate the process of electrification of automobiles. "

It is reported that STMicroelectronics is expected to deliver the first samples of power gallium nitride discrete devices to major customers later this year, and then deliver GaN IC products in a few months.